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| (R) EMIF06-HMC01F2 6 LINES EMI FILTER INCLUDING ESD PROTECTION IPADTM MAIN APPLICATION High Speed MultiMediaCardTM DESCRIPTION The EMIF06-HMC01F2 is a highly integrated array designed to suppress EMI / RFI noise for High Speed MultiMediaCardTM port filtering. The EMIF06-HMC01F2 Flip-Chip packaging means the package size is equal to the die size. Additionally, this filter includes an ESD protection circuitry which prevents the protected device from destruction when subjected to ESD surges up to 15 kV. BENEFITS 6 lines low-pass-filter High efficiency in EMI filtering Very low PCB space consuming: < 4.4 mm2 Lead Free package Very thin package: 0.65 mm High efficiency in ESD suppression High reliability offered by monolithic integration High reducing of parasitic elements through integration & wafer level packaging COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 on external pins15kV (air discharge) 8kV (contact discharge) MIL STD 883E - Method 3015-6 Class 3 Figure 2: Configuration R10 R11 R12 R13 R14 Vmmc MMCclk MMCcmd MMCdat0 MMCdat1 MMCdat2 MMCdat3 Vmmc R2 R3 R4 R5 R6 R7 clk cmd dat0 dat1 dat2 dat3 Flip-Chip (16 Bumps) Table 1: Order Code Part Number EMIF06-HMC01F2 Marking GH Figure 1: Pin Configuration (ball side) 4 3 2 1 A B C D Table 2: Ball configuration A1 A2 A3 A4 B1 B2 B3 GND cmd clk Vmmc/Vdd MMCclk dat1 dat0 gnd MMCcmd C1 C2 C3 C4 D1 D2 D3 D4 dat2 gnd MMCdat1 MMCdat0 dat3 gnd MMCdat3 MMCdat2 B4 TM: IPAD is a trademark of STMicroelectronics. January 2005 REV. 1 1/7 EMIF06-HMC01F2 Table 3: Absolute Maximum Ratings (Tamb = 25C)) Symbol Parameter and test conditions Internal pins (A4, B4, C3, C4, D3, D4): ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge External pins (A1, A2, A3, B1, B2, C1, D1): ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge Maximum junction temperature Operating temperature range Storage temperature range Value 2 2 15 8 125 - 40 to + 85 - 55 to + 150 C C C Unit VPP kV Tj Top Tstg Table 4: Electrical Characteristics (Tamb = 25C) Symbol VBR IRM VRM Cline Parameter Breakdown voltage Leakage current @ VRM Stand-off voltage Input capacitance per line VBR VRM IRM IRM VRM VBR V I Symbol VBR IRM Cline R2,R3,R4, R5, R6, R7 R10, R11, R12, R13 R14 Test conditions IR = 1 mA VRM = 3V @ 0V I = 50 mA I = 50 A I = 200 A Tolerance Min. 14 Typ. Max. Unit V 0.1 20 20% 30% 30% 50 75 7 A pF k k 2/7 EMIF06-HMC01F2 Figure 3: S21 (dB) attenuation measurement 0.00 dB - 10.00 Figure 4: Analog crosstalk measurement 0.00 dB - 10.00 - 20.00 - 20.00 - 30.00 - 40.00 - 30.00 - 50.00 - 60.00 - 40.00 - 70.00 - 50.00 100.0k 1.0M 10.0M f/Hz 100.0M 1.0G - 80.00 100.0k 1.0M 10.0M f/Hz 100.0M 1.0G Figure 5: ESD response to IEC61000-4-2 (+15kV air discharge) on one input V(in) and on one output (Vout) Figure 6: ESD response to IEC61000-4-2 (-15kV air discharge) on one input V(in) and on one output (Vout) Input 10V/d Input 10V/d Output 10V/d Output 10V/d 200ns/d Figure 7: Junction capacitance versus reverse voltage applied (typical values) CLINE (pF) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Vosc=30mV F=1MHz Ta=25 C 200ns/d VLINE (V) 3/7 EMIF06-HMC01F2 Figure 8: Aplac model device structure R10 R11 Lbump Rbump Vmmc_Vdd Cbump Rsub A3 Lbump Rbump MMCclk Cbump Rsub A4 Lbump Rbump MMCcmd Cbump Rsub B4 Lbump Rbump MMCdat0 Cbump Rsub C4 Lbump Rbump Cbump Rsub C3 Lbump Rbump MMCdat2 Cbump Rsub D4 Lbump Rbump MMCdat3 Cbump Rsub D3 bulk Rgnd Cgnd bulk Lgnd bulk Rbump bulk dat3 Rbump Lbump Rsub Cbump D1 bulk bulk Lbump dat2 Rbump Lbump Rsub Cbump C1 bulk MMCdat1 MODEL = demif06_gnd bulk MMCdat2 R7 MMCdat3 MODEL = demif06 dat3 dat0 MODEL = demif06 bulk bulk dat1 Rbump Lbump Rsub Cbump B1 Rsub Cbump B2 bulk MMCdat0 R5 MMCdat1 R6 dat2 bulk Rbump Lbump dat1 MMCclk R3 MMCcmd R4 dat0 cmd Rsub Cbump A1 cmd bulk Rbump Lbump bulk Vmmc_Vdd R14 R2 clk clk Rbump Lbump Rsub Cbump A2 R12 R13 Figure 9: Aplac model parameters Variables R2 50 R3 50 R4 50 R5 50 R6 50 R7 50 R10 75k R11 75k R12 75k R13 75k R14 7k Rsub 100m Variables Cz 11pF Cz_gnd 45pF RS_gnd 480m Ls 950pH Rs 150m Rbump 100m Lbump 50pH Cbump 0.15pF Lgnd 50pH Rgnd 100m Cgnd 0.15pF demif06_gnd BV=14 IBV=1m CJO=Cz_gnd M=0.31 RS=RS_gnd VJ=0.6 TT=100n demif06 BV=14 IBV=1m CJO=Cz M=0.31 RS=1 VJ=0.6 TT=100n 4/7 EMIF06-HMC01F2 Figure 10: Ordering Information Scheme EMIF EMI Filter Number of lines Information x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version Package F = Flip-Chip x = 1: 500m, Bump = 315m = 2: Leadfree Pitch = 500m, Bump = 315m = 3: Leadfree Pitch = 400m, Bump = 250m yy - xxx zz Fx Figure 11: FLIP-CHIP Package Mechanical Data 500m 10 315m 50 650m 65 500m 10 1.92mm 50m Figure 12: Foot Print Recommendations 1.92mm 50m Figure 13: Marking Dot, ST logo xx = marking z = packaging location yww = datecode (y = year ww = week) 365 240 365 Copper pad Diameter : 250m recommended , 300m max E Solder stencil opening : 330m Solder mask opening recommendation : 340m min for 315m copper pad diameter xxz y ww 40 220 All dimensions in m 5/7 EMIF06-HMC01F2 Figure 14: FLIP-CHIP Tape and Reel Specification Dot identifying Pin A1 location 4 +/- 0.1 O 1.5 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 0.73 +/- 0.05 All dimensions in mm Table 5: Ordering Information Ordering code EMIF06-HMC01F2 Marking GH Package Flip-Chip Weight 5.3 mg Base qty 5000 Delivery mode Tape & reel 7" Note: More packing informations are available in the application note AN1235: "Flip-Chip: Package description and recommendations for use" 8 +/- 0.3 STE STE STE xxx yww User direction of unreeling xxx yww xxx yww 4 +/- 0.1 Table 6: Revision History Date 25-Jan-2005 Revision 1 First issue. Description of Changes 6/7 EMIF06-HMC01F2 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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